V3I6P104

Review of the Architectural Changes of Conventional MOSFET Structure to control Short Channel Effects 

Sumedha Dasgupta^1*, Shuvam Mondal¹, Payel Paul², Mamani Dey³, Shibam Changdar⁴

Abstract

With the advancement of nanotechnology, conventional MOSFET structure is replaced by newer architectures like ON- insulator structures, asymmetric source/drain structures, use of III-V semiconductors, double gate (DG) and gate-all around (GAA) structures, FINFETs etc to control the short channel effects. Improvement of device performance is further looked upon by replacing conventional SiO2 with high-k dielectric materials like Al₂O₃, ZrO₂, HfO₂.This paper clearly reviews this architectural progress of MOSFETs necessary to project MOSFET as the suitable device for low power, high speed applications.

Keywords:

ON-insulators; asymmetric source/drain; III-V semiconductors; DG and GAA, high-k dielectric